Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling | Zendy

T. S. Santos | Zendy; Jagadeesh S. Moodera | Zendy; Karthik V. Raman | Zendy; Ezaegusse | Zendy; J. Holroyd | Zendy; J. Dvořák | Zendy; M. Liberati | Zendy; Y. U. Idzerda | Zendy; Elke Arenholz | Zendy

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Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

Author(s) -

T. S. Santos,

Jagadeesh S. Moodera,

Karthik V. Raman,

Ezaegusse,

J. Holroyd,

J. Dvořák,

M. Liberati,

Y. U. Idzerda,

Elke Arenholz

Publication year - 2008

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.101.147201

Subject(s) - quantum tunnelling , condensed matter physics , curie temperature , ferromagnetism , spin (aerodynamics) , materials science , electron , semiconductor , magnetic semiconductor , tunnel effect , physics , optoelectronics , quantum mechanics , thermodynamics

A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)]

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