Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy | Zendy

F. Hüe | Zendy; Martin Hÿtch | Zendy; H. Bender | Zendy; Florent Houdellier | Zendy; A. Claverie | Zendy

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Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy

Author(s) -

F. Hüe,

Martin Hÿtch,

H. Bender,

Florent Houdellier,

A. Claverie

Publication year - 2008

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.100.156602

Subject(s) - high resolution transmission electron microscopy , materials science , silicon , transmission electron microscopy , field effect transistor , transistor , strain (injury) , strain engineering , semiconductor , resolution (logic) , gate oxide , condensed matter physics , strained silicon , optoelectronics , nanotechnology , physics , crystalline silicon , quantum mechanics , voltage , amorphous silicon , medicine , artificial intelligence , computer science

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