Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals | Zendy

Ajay Kumar | Zendy; A. M. Biradar | Zendy

Open Access

Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals

Author(s) -

Ajay Kumar,

A. M. Biradar

Publication year - 2011

Publication title -

physical review e

Language(s) - English

Resource type - Journals

eISSN - 1550-2376

pISSN - 1539-3755

DOI - 10.1103/physreve.83.041708

Subject(s) - cadmium telluride photovoltaics , materials science , ferroelectricity , quantum dot , dielectric , doping , cadmium , polarization (electrochemistry) , optoelectronics , condensed matter physics , chemistry , physics , metallurgy

We present here the dielectric and electro-optical studies of cadmium telluride quantum dots (CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the doping of CdTe QDs not only induced a pronounced memory effect but also affected the physical parameters of FLC material (LAHS19). The modifications in the physical parameters and memory effect of LAHS19 are found to depend on the concentration ratio of CdTe QDs. The lower concentration of CdTe QDs (1–3 wt%) enhanced the values of spontaneous polarization and rotational viscosity of LAHS19 material but did not favor the memory effect, whereas a higher concentration of CdTe QDs (>5 wt%) degraded the alignment of LAHS19 material. The doping of ∼5 wt% of CdTe QDs is found to be the most suitable for achieving good memory effect without significantly affecting the material parameters

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