Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well | Zendy

S. S. Krishtopenko | Zendy; S. Ruffenach | Zendy; F. GonzálezPosada | Zendy; G. Boissier | Zendy; Michał Marcinkiewicz | Zendy; M. A. Fadeev | Zendy; A. M. Kadykov | Zendy; V. V. Rumyantsev | Zendy; S. Morozov | Zendy; V. I. Gavrilenko | Zendy; C. Conséjo | Zendy; W. Desrat | Zendy; B. Jouault | Zendy; W. Knap | Zendy; E. Tournié | Zendy; F. Teppe | Zendy

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Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Author(s) -

S. S. Krishtopenko,

S. Ruffenach,

F. GonzálezPosada,

G. Boissier,

Michał Marcinkiewicz,

M. A. Fadeev,

A. M. Kadykov,

V. V. Rumyantsev,

S. Morozov,

V. I. Gavrilenko,

C. Conséjo,

W. Desrat,

B. Jouault,

W. Knap,

E. Tournié,

F. Teppe

Publication year - 2018

Publication title -

physical review. b./physical review. b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.78

H-Index - 465

eISSN - 2469-9969

pISSN - 2469-9950

DOI - 10.1103/physrevb.97.245419

Subject(s) - brillouin zone , terahertz radiation , materials science , condensed matter physics , quantum well , spectroscopy , photoluminescence , band gap , terahertz spectroscopy and technology , layer (electronics) , direct and indirect band gaps , optoelectronics , electronic band structure , optics , physics , laser , nanotechnology , quantum mechanics

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