Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors
Author(s) -
A. de Jamblinne de Meux,
Geoffrey Pourtois,
Jan Genoe,
Paul Heremans
Publication year - 2018
Publication title -
physical review. b./physical review. b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.78
H-Index - 465
eISSN - 2469-9969
pISSN - 2469-9950
DOI - 10.1103/physrevb.97.045208
Subject(s) - delocalized electron , amorphous solid , materials science , effective mass (spring–mass system) , semiconductor , electron localization function , electron mobility , condensed matter physics , valence (chemistry) , physics , electron , crystallography , chemistry , quantum mechanics , optoelectronics
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