Effective scheme to determine accurate defect formation energies and charge transition levels of point defects in semiconductors | Zendy

Cang Lang Yao | Zendy; Jian Chen Li | Zendy; Wang Gao | Zendy; Alexandre Tkatchenko | Zendy; Qing Jiang | Zendy

Open Access

Effective scheme to determine accurate defect formation energies and charge transition levels of point defects in semiconductors

Author(s) -

Cang Lang Yao,

Jian Chen Li,

Wang Gao,

Alexandre Tkatchenko,

Qing Jiang

Publication year - 2017

Publication title -

physical review. b./physical review. b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.78

H-Index - 465

eISSN - 2469-9969

pISSN - 2469-9950

DOI - 10.1103/physrevb.96.245203

Subject(s) - physics , charge (physics) , energy (signal processing) , lambda , semiconductor , condensed matter physics , type (biology) , quantum mechanics , ecology , biology

Cang Lang Yao,1 Jian Chen Li,1 Wang Gao,1,* Alexandre Tkatchenko,2 and Qing Jiang1 1Key Laboratory of Automobile Materials (Jilin University), Ministry of Education, Department of Materials Science and Engineering, Jilin University, Changchun 130022, China 2Physics and Materials Science Research Unit, University of Luxembourg, L-1511 Luxembourg (Received 10 January 2017; revised manuscript received 26 September 2017; published 26 December 2017)

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