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Anisotropic magnetoresistance across Verwey transition in charge ordered Fe3O4 epitaxial films
Author(s) -
Xiang Liu,
Wenbo Mi,
Qiang Zhang,
Xixiang Zhang
Publication year - 2017
Publication title -
physical review. b./physical review. b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.78
H-Index - 465
eISSN - 2469-9969
pISSN - 2469-9950
DOI - 10.1103/physrevb.96.214434
Subject(s) - magnetoresistance , condensed matter physics , charge ordering , anisotropy , charge (physics) , materials science , electrical resistivity and conductivity , raman spectroscopy , field (mathematics) , magnetic field , physics , crystallography , chemistry , optics , mathematics , quantum mechanics , pure mathematics
The anisotropic magnetoresistance (AMR) near the Verwey temperature $({T}_{\mathrm{V}})$ is investigated in charge ordered ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ epitaxial films. When the temperature continuously decreases below ${T}_{\mathrm{V}}$, the symmetry of AMR in ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$(100) film evolves from twofold to fourfold at a magnetic field of 50 kOe, where the magnetic field is parallel to the film surface, whereas AMR in ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$(111) film maintains twofold symmetry. By analyzing AMR below ${T}_{\mathrm{V}}$, it is found that the Verwey transition contains two steps, including a fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below ${T}_{\mathrm{V}}$, the twofold AMR in ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR at a lower temperature can be ascribed to the in-plane trimerons. By comparing the AMR in the films with two orientations, it is found that the trimeron shows a smaller resistivity in a parallel magnetic field. The field-dependent AMR results show that the trimeron-sensitive field has a minimum threshold of about 2 kOe.

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