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Observation of the inverse spin Hall effect in the topological crystalline insulator SnTe using spin pumping
Author(s) -
Shinobu Ohya,
Akiyori Yamamoto,
Tomonari Yamaguchi,
Ryo Ishikawa,
Ryota Akiyama,
Lê Đức Anh,
Shobhit Goel,
Yuki K. Wakabayashi,
Shinji Kuroda,
Masaaki Tanaka
Publication year - 2017
Publication title -
physical review. b./physical review. b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.78
H-Index - 465
eISSN - 2469-9969
pISSN - 2469-9950
DOI - 10.1103/physrevb.96.094424
Subject(s) - spintronics , condensed matter physics , spin hall effect , spin pumping , topological insulator , electromotive force , materials science , heterojunction , surface states , spin (aerodynamics) , microwave , inverse , epitaxy , spin polarization , physics , ferromagnetism , surface (topology) , nanotechnology , electron , quantum mechanics , geometry , mathematics , thermodynamics , layer (electronics)
Topological crystalline insulator SnTe is a promising material for future spintronics applications because of the strong spin-orbit coupling and surface states protected by the mirror symmetry of the crystal. In this paper, using a high-quality epitaxial (001)-oriented Fe/SnTe/CdTe/ZnTe heterostructure grown on GaAs, we successfully observe the inverse spin Hall effect in SnTe induced by spin pumping, which is confirmed by detailed analyses of the dependence of the electromotive force on the microwave power, magnetic-field angle, and temperature. By a rough estimation, a relatively large spin Hall angle of ∼0.01 is obtained for bulk SnTe at room temperature. This large value may be partially caused by the surface states. Our result suggests that SnTe can be used for efficient spin-charge current conversion

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