Determination of low-strain interfaces via geometric matching | Zendy

Line Jelver | Zendy; Peter Mahler Larsen | Zendy; Daniele Stradi | Zendy; Kurt Stokbro | Zendy; Karsten W. Jacobsen | Zendy

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Determination of low-strain interfaces via geometric matching

Author(s) -

Line Jelver,

Peter Mahler Larsen,

Daniele Stradi,

Kurt Stokbro,

Karsten W. Jacobsen

Publication year - 2017

Publication title -

physical review. b./physical review. b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.78

H-Index - 465

eISSN - 2469-9969

pISSN - 2469-9950

DOI - 10.1103/physrevb.96.085306

Subject(s) - epitaxy , alloy , lattice constant , materials science , lattice (music) , semiconductor , condensed matter physics , crystal (programming language) , superconductivity , crystallography , physics , optoelectronics , nanotechnology , optics , computer science , chemistry , metallurgy , diffraction , layer (electronics) , acoustics , programming language

Determination of low-strain interfaces via geometric matching We present a general method for combining two crystals into an interface. The method finds all possible interfaces between the crystals with small coincidence cells and identifies the strain and area of the corresponding two-dimensional cells of the two crystal surfaces. We apply the method to the two semiconductor alloys InAs1−xSbx and GaxIn1−xAs combined with a selection of pure metals or with NbTiN to create semiconductor/superconductor interfaces. The lattice constant of the alloy can be tuned by composition and we can extract the alloy lattice parameters corresponding to zero strain in both the metal and the alloy. The results can be used to suggest new epitaxially matched interfaces between two materials.

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