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GdN thin film: Chern insulating state on square lattice
Author(s) -
Zhi Li,
Jinwoong Kim,
Nicholas Kioussis,
Shu-Yu Ning,
Haibin Su,
Toshiaki Iitaka,
Takami Tohyama,
Xinyu Yang,
Jiu-Xing Zhang
Publication year - 2015
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.92.201303
Subject(s) - condensed matter physics , materials science , band gap , atomic orbital , quantum anomalous hall effect , ferromagnetism , square lattice , semimetal , doping , density functional theory , ground state , lattice (music) , thin film , electron , physics , quantum hall effect , quantum mechanics , nanotechnology , acoustics , ising model
Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system affords a great chance to realize the quantum anomalous Hall Effect on a square lattice without either a magnetic substrate or transition metal doping, making synthesis easier. The band inversion between 5d-orbitals of Gd and 2p-orbitals of N is verified by first-principles calculation based on density functional theory, and the band gap can be as large as 100 meV within GdN trilayer. With further increase of film thickness, the band gap tends to close and the metallic bulk property becomes obvious.

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