Rashba effect in single-layer antimony telluroiodide SbTeI | Zendy

Houlong Zhuang | Zendy; Valentino R. Cooper | Zendy; Haixuan Xu | Zendy; Panchapakesan Ganesh | Zendy; Richard G. Hennig | Zendy; Paul R. C. Kent | Zendy

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Rashba effect in single-layer antimony telluroiodide SbTeI

Author(s) -

Houlong Zhuang,

Valentino R. Cooper,

Haixuan Xu,

Panchapakesan Ganesh,

Richard G. Hennig,

Paul R. C. Kent

Publication year - 2015

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.92.115302

Subject(s) - spintronics , condensed matter physics , rashba effect , coupling (piping) , band gap , layer (electronics) , materials science , semiconductor , spin–orbit interaction , antimony , spin (aerodynamics) , narrow gap semiconductor , phonon , physics , ferromagnetism , nanotechnology , optoelectronics , metallurgy , thermodynamics

Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV A, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our study suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.

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