Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects
Author(s) -
Juan Gabriel Ramírez,
Thomas Saerbeck,
Siming Wang,
Juan Trastoy,
M. Malnou,
J. Lesueur,
Jean-Paul Crocombette,
Javier E. Villegas,
Iván K. Schuller
Publication year - 2015
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.91.205123
Subject(s) - physics , condensed matter physics , order (exchange) , vanadium , materials science , metal–insulator transition , electron , electrical resistivity and conductivity , quantum mechanics , finance , economics , metallurgy
Juan Gabriel Ramirez,1 Thomas Saerbeck,1 Siming Wang,1,2 J. Trastoy,3,4 M. Malnou,5 J. Lesueur,5 Jean-Paul Crocombette,6 Javier E. Villegas,3,4,* and Ivan K. Schuller1,2,† 1Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA 2Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, USA 3Unité Mixte de Physique CNRS/Thales, 1 avenue A Fresnel, 91767 Palaiseau, France 4Université Paris Sud 11, 91405 Orsay, France 5LPEM, CNRS-ESPCI, 10 rue Vauquelin, 75231 Paris, France 6CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette, France (Received 22 July 2014; revised manuscript received 2 May 2015; published 21 May 2015)
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