Photon assisted tunneling in pairs of silicon donors | Zendy

K. L. Litvinenko | Zendy; S. G. Pavlov | Zendy; H.-W. Hübers | Zendy; N. V. Abrosimov | Zendy; C. R. Pidgeon | Zendy; B. N. Murdin | Zendy

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Photon assisted tunneling in pairs of silicon donors

Author(s) -

K. L. Litvinenko,

S. G. Pavlov,

H.-W. Hübers,

N. V. Abrosimov,

C. R. Pidgeon,

B. N. Murdin

Publication year - 2014

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.89.235204

Subject(s) - quantum tunnelling , photon , silicon , excitation , terahertz radiation , physics , charge (physics) , electron , atomic physics , semiconductor , optoelectronics , materials science , condensed matter physics , quantum mechanics

Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons.

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