Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts:p-type Schottky barrier and spin-injection control | Zendy

LiYong Gan | Zendy; Qingyun Zhang | Zendy; Yingchun Cheng | Zendy; Udo Schwingenschlögl | Zendy

Open Access

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts:p-type Schottky barrier and spin-injection control

Author(s) -

LiYong Gan,

Qingyun Zhang,

Yingchun Cheng,

Udo Schwingenschlögl

Publication year - 2013

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.88.235310

Subject(s) - schottky barrier , condensed matter physics , ferromagnetism , materials science , magnetic semiconductor , semiconductor , doping , spin polarization , schottky diode , transition metal , fermi level , physics , optoelectronics , chemistry , quantum mechanics , electron , diode , biochemistry , catalysis

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure

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