Electronic structure of Kondo lattice compounds YbNi3 X 9 (X = Al, …
Author(s) -
Yuki Utsumi,
Hitoshi Sato,
S. Ōhara,
Tetsuro Yamashita,
Kojiro Mimura,
Satoru Motonami,
K. Shimada,
Shigenori Ueda,
Keisuke Kobayashi,
H. Yamaoka,
Naohito Tsujii,
Nozomu Hiraoka,
H. Namatame,
M. Taniguchi
Publication year - 2012
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.86.115114
Subject(s) - valence (chemistry) , spectroscopy , spectral line , antiferromagnetism , anderson impurity model , physics , x ray photoelectron spectroscopy , photoemission spectroscopy , materials science , crystallography , condensed matter physics , analytical chemistry (journal) , atomic physics , nuclear magnetic resonance , chemistry , impurity , quantum mechanics , chromatography , astronomy
valences of YbNi3Ga9 and YbNi3Al9 at 22 K were evaluated to be 2.43 and 2.97, respectively. Based on the results of the Ni 2p and valence-band HAXPES spectra together with soft x-ray valence-band spectra, we described that the difference of physical properties of YbNi3X9 (X = Al, Ga) is derived from the differences of the 4f -hole level relative to the Fermi level (EF )a nd Ni 3d density of states at EF. The HAXPES results on the Yb valences were consistent with those obtained by x-ray absorption spectroscopy using the partial fluorescence yield mode and resonant x-ray emission spectroscopy at the Yb L3 edge.
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