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Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals
Author(s) -
A. Debelle,
Marie Backman,
L. Thomé,
William J. Weber,
M. Toulemonde,
S. Mylonas,
Alexandre Boulle,
Olli H. Pakarinen,
N. Juslin,
Flyura Djurabekova,
K. Nordlund,
F. Garrido,
Didier Chaussende
Publication year - 2012
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.86.100102
Subject(s) - recrystallization (geology) , swift heavy ion , materials science , silicon carbide , irradiation , amorphous solid , ion , carbide , silicon , chemical physics , molecular dynamics , deposition (geology) , crystallography , optoelectronics , composite material , chemistry , computational chemistry , fluence , nuclear physics , physics , paleontology , organic chemistry , biology , sediment
Expérience GANIL/ARIBEThe healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon

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