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Vacancy induced half-metallicity in half-Heusler semiconductors
Author(s) -
Zhiyong Zhu,
Yingchun Cheng,
Udo Schwingenschlögl
Publication year - 2011
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.84.113201
Subject(s) - condensed matter physics , materials science , ferromagnetism , vacancy defect , semiconductor , degeneracy (biology) , magnetic moment , magnetic semiconductor , electronic structure , character (mathematics) , spin (aerodynamics) , physics , thermodynamics , bioinformatics , geometry , optoelectronics , mathematics , biology
First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials is broken for all types of isolated vacancies under consideration, except for Ni-deficient NiTiSn. A half-metallic character is identified in Sn-deficient NiTiSn and Co/Ti/Sb-deficient CoTiSb. We can explain our findings by introducing an extending Slater-Pauling rule for systems with defects. A ferromagnetic ordering of the local moments due to double exchange appears to be likely

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