Quantum transport in indium nitride nanowires | Zendy

Liubing Huang | Zendy; Dongdong Li | Zendy; PaiChun Chang | Zendy; Sheng Chu | Zendy; H. M. Bozler | Zendy; I. S. Beloborodov | Zendy; Jia Grace Lu | Zendy

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Quantum transport in indium nitride nanowires

Author(s) -

Liubing Huang,

Dongdong Li,

PaiChun Chang,

Sheng Chu,

H. M. Bozler,

I. S. Beloborodov,

Jia Grace Lu

Publication year - 2011

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.83.245310

Subject(s) - condensed matter physics , magnetoresistance , materials science , nanowire , variable range hopping , indium nitride , thermal conduction , magnetic field , indium , anisotropy , asymmetry , nitride , physics , nanotechnology , optoelectronics , optics , quantum mechanics , layer (electronics) , composite material

Transport measurements are performed under the variations of temperature and magnetic field on single crystalline InN nanowires. Conduction at low temperature reveals a three-dimensional Mott variable range hopping mechanism. With rising temperature, a semiconductor-to-metal transition is observed around 80 K. In addition, the nanowire exhibits negative magnetoresistance under both parallel and perpendicular fields due to the suppression of the electron wave function interference. A field direction asymmetry on the change of magnetoresistance is examined, attributing to the conduction channel anisotropy. © 2011 American Physical Society.

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