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Two-dimensional field-sensing map and magnetic anisotropy dispersion in magnetic tunnel junction arrays
Author(s) -
Wenzhe Zhang,
Gang Xiao,
Matt Carter
Publication year - 2011
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.83.144416
Subject(s) - anisotropy , dispersion (optics) , condensed matter physics , sensitivity (control systems) , magnetoresistance , magnetic anisotropy , coercivity , field (mathematics) , materials science , tunnel magnetoresistance , magnetic field , computational physics , physics , optics , magnetization , electronic engineering , ferromagnetism , mathematics , quantum mechanics , pure mathematics , engineering
Due to the inherent disorder in local structures, anisotropy dispersion exists in almost all systems that consist of multiple magnetic tunnel junctions (MTJs). Aided by micromagnetic simulations based on the Stoner-Wohlfarth (S-W) model, we used a two-dimensional field-sensing map to study the effect of anisotropy dispersion in MTJ arrays. First, we recorded the field sensitivity value of an MTJ array as a function of the easy- and hard-axis bias fields, and then extracted the anisotropy dispersion in the array by comparing the experimental sensitivity map to the simulated map. Through a mean-square-error-based image processing technique, we found the best match for our experimental data, and assigned a pair of dispersion numbers (anisotropy angle and anisotropy constant) to the array. By varying each of the parameters one at a time, we were able to discover the dependence of field sensitivity on magnetoresistance ratio, coercivity, and magnetic anisotropy dispersion. The effects from possible edge domains are also discussed to account for a correction term in our analysis of anisotropy angle distribution using the S-W model. We believe this model is a useful tool for monitoring the formation and evolution of anisotropy dispersion in MTJ systems, and can facilitate better design of MTJ-based devices.

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