Local structural ordering in low-temperature-grown epitaxial Fe3+xSi1−xfilms … | Zendy

Kohei Hamaya | Zendy; T. Murakami | Zendy; S. Yamada | Zendy; Ko Mibu | Zendy; Masanobu Miyao | Zendy

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Local structural ordering in low-temperature-grown epitaxial Fe3+xSi1−xfilms …

Author(s) -

Kohei Hamaya,

T. Murakami,

S. Yamada,

Ko Mibu,

Masanobu Miyao

Publication year - 2011

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.83.144411

Subject(s) - stoichiometry , materials science , epitaxy , spectral line , ferromagnetism , crystallography , spintronics , condensed matter physics , analytical chemistry (journal) , chemistry , physics , nanotechnology , layer (electronics) , quantum mechanics , chromatography

For exploring group-IV semiconductor spintronics with ferromagnetic Heusler compounds, we study the local structural ordering of the stoichiometric Fe 3Si and off-stoichiometric Fe 3.2Si 0.8 films epitaxially grown on Ge(111) at a very low temperature of 130 ̂C. Analyzing their Fe57 Mössbauer spectra, we can discuss the site occupation of Fe atoms in the films grown directly on a semiconductor substrate, where the influence of the interfacial reactions between Fe 3Si or Fe 3.2Si 0.8 and Ge on the Mössbauer spectra is minimized. As a result, we can quantitatively obtain the local degree of the D0 3 ordering (∼67%) for the as-grown stoichiometric films, whereas we can not see the structural ordering for the as-grown off-stoichiometric films. Comparing the analytic data between as-grown and annealed films, we find that the postannealing can act effectively on the improvement of the structural ordering only for the off-stoichiometric films

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