Magnetoresistance in an asymmetricGa1−xMnxAsresonant tunneling diode | Zendy

Edward Likovich | Zendy; Kasey J. Russell | Zendy; Wei Yi | Zendy; V. Narayanamurti | Zendy; Keh-Chiang Ku | Zendy; Meng Zhu | Zendy; N. Samarth | Zendy

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Magnetoresistance in an asymmetricGa1−xMnxAsresonant tunneling diode

Author(s) -

Edward Likovich,

Kasey J. Russell,

Wei Yi,

V. Narayanamurti,

Keh-Chiang Ku,

Meng Zhu,

N. Samarth

Publication year - 2009

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.80.201307

Subject(s) - magnetoresistance , quantum tunnelling , antiparallel (mathematics) , condensed matter physics , ferromagnetism , materials science , algorithm , physics , computer science , quantum mechanics , magnetic field

In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n-type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance.

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