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Resistive upper critical fields and anisotropy of an electron-doped infinite-layer cuprate
Author(s) -
Vladimir P. Jovanović,
Z.Z. Li,
H. Raffy,
J. Briático,
A. A. Sinchenko,
P. Monceau
Publication year - 2009
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.80.024501
Subject(s) - cuprate , condensed matter physics , superconductivity , physics , anisotropy , doping , resistive touchscreen , magnetic field , electron , critical field , epitaxy , materials science , layer (electronics) , nanotechnology , quantum mechanics , engineering , electrical engineering
We report a transport study down to 2 K and in high magnetic fields up to 20 T of a highly $c$-axis-oriented epitaxial thin film of electron-doped ``infinite-layer'' cuprate superconductor ${\text{Sr}}_{1\ensuremath{-}x}{\text{La}}_{x}{\text{CuO}}_{2}$ with ${T}_{c}$ of 26 K. A 16 T magnetic field perpendicular to the $ab$ plane of the film completely suppresses superconductivity, even at the lowest temperature. Perpendicular magnetic fields shift the resistive transition to lower temperatures, without significant broadening, in a way similar to that seen in conventional superconductors. The upper critical field ${H}_{c2\ensuremath{\perp}}(T)$ exhibits an almost linear temperature dependence. It is shown that electron-doped infinite-layer cuprate presents three-dimensional superconductivity due to a weaker anisotropy $(\ensuremath{\gamma}=15)$ and smaller ${H}_{c2\ensuremath{\perp}}(T)$ values than the ones of hole-doped cuprates.

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