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Insulator to correlated metal transition inV1xMoxO2
Author(s) -
K. L. Holman,
Tyrel M. McQueen,
A. J. Williams,
Tomasz Klimczuk,
Peter W. Stephens,
H.W. Zandbergen,
Qiang Xü,
F. Ronning,
R. J. Cava
Publication year - 2009
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.79.245114
Subject(s) - materials science , metal , condensed matter physics , phase diagram , magnetic susceptibility , pairing , crystal structure , metal–insulator transition , antiferromagnetism , electrical resistivity and conductivity , doping , crystallography , physics , phase (matter) , superconductivity , chemistry , quantum mechanics , metallurgy
Although many materials display the transition from insulating to metallic behavior on doping, only a few, such as VO2, have the right combination of crystal structure and physical properties to serve as model systems. Here we report the electronic and structural characteristics of the insulator to metal transition in V1?xMoxO2, which we have studied over the range 0.0?x?0.50 through characterization of the electrical resistivity, magnetic susceptibility, specific heat, and average- and short-range crystal structures. We find that metal-metal pairing exists in small domains in the doped metallic phases and an unexpected phenomenology for the crossover between a Curie-Weiss insulating regime and an intermediate mass metallic regime. An electronic phase diagram is presented

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