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Enhanced single-photon emission in the near infrared from a diamond color center
Author(s) -
Igor Aharonovich,
Chunyuan Zhou,
Alastair Stacey,
J. O. Orwa,
Stefania Castelletto,
David Simpson,
Andrew D. Greentree,
François Treussart,
Jean-François Roch,
Steven Prawer
Publication year - 2009
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.79.235316
Subject(s) - diamond , materials science , photoluminescence , fabrication , chemical vapor deposition , ion implantation , optoelectronics , infrared , vacancy defect , nickel , center (category theory) , quantum dot , quantum metrology , single photon source , optics , quantum technology , ion , quantum , physics , chemistry , condensed matter physics , crystallography , medicine , alternative medicine , pathology , quantum mechanics , open quantum system , metallurgy , composite material
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of an as-yet uncharacterized nickel-related complex in diamond which has photophysical properties surpassing the two main-stay centers for single-photon applications, namely, the nitrogen-vacancy and the nickel-nitrogen complex (NE8) center. This center was fabricated using focused ion-beam implantation of nickel into isolated chemical vapor-deposited diamond crystals. A possible correlation of the center to a Ni/Si complex is substantiated by a coimplantation of Ni and Si into a pure bulk diamond. Room-temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns

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