Open AccessFirst-principles simulations of copper diffusion in tantalum and tantalum nitride
Author(s) -
Yi Zhao,
Gang Lü
Publication year - 2009
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.79.214104
Subject(s) - tantalum nitride , tantalum , diffusion barrier , materials science , diffusion , vacancy defect , ionic bonding , nitride , copper , chemical physics , activation energy , covalent bond , condensed matter physics , crystallography , nanotechnology , thermodynamics , chemistry , ion , metallurgy , layer (electronics) , physics , organic chemistry
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