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Step-edge sputtering through grazing incidence ions investigated by scanning tunneling microscopy and molecular dynamics simulations
Author(s) -
Alex Redinger,
Yudi Rosandi,
Herbert M. Urbassek,
Thomas Michely
Publication year - 2008
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.77.195436
Subject(s) - sputtering , scanning tunneling microscope , ion , materials science , yield (engineering) , fluence , enhanced data rates for gsm evolution , molecular dynamics , atomic physics , molecular physics , chemical physics , nanotechnology , chemistry , physics , thin film , computational chemistry , composite material , telecommunications , organic chemistry , computer science
Scanning tunneling microscopy is used to quantify step-edge sputtering of Pt 111 at 550 K by grazing incidence ion bombardment with 5 keV Ar+ ions. For bombardment conditions causing negligible erosion on terraces, damage features associated with step bombardment allow us to visualize step retraction and thus to quantify the step-edge sputtering yield. An alternative method for step-edge yield determination, which is applicable under more general conditions, is the analysis of the concentration of ascending steps together with the removed amount as a function of ion fluence. Interestingly, the azimuthal direction of the impinging ions with respect to the surface significantly changes the sputtering yield at step edges. This change is attributed to the orientation dependence of subsurface channeling. Atomistic insight into step-edge sputtering and its azimuthal dependence is given by molecular dynamics simulations of ion impacts at 0 and 550 K. The simulations also demonstrate a strong dependence of the step-edge sputtering yield on temperature.

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