Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along[110] | Zendy

P. D. Szkutnik | Zendy; A. Sgarlata | Zendy; A. Balzarotti | Zendy; Nunzio Motta | Zendy; A. Ronda | Zendy; I. Berbézier | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along[110]

Author(s) -

P. D. Szkutnik,

A. Sgarlata,

A. Balzarotti,

Nunzio Motta,

A. Ronda,

I. Berbézier

Publication year - 2007

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.75.033305

Subject(s) - vicinal , scanning tunneling microscope , metastability , heterojunction , materials science , substrate (aquarium) , nucleation , deposition (geology) , crystallography , condensed matter physics , physics , nanotechnology , optoelectronics , chemistry , geology , thermodynamics , quantum mechanics , paleontology , oceanography , sediment

The atomistic pathway towards the growth of semiconductor heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=600 degrees Celsius on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by ad-dimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research