Accuracy of the calculated unoccupied states in GaN phases as tested by high-resolution electron energy-loss spectroscopy | Zendy

M. Sergio Moreno | Zendy; Sorin Lazar | Zendy; H.W. Zandbergen | Zendy; R.F. Egerton | Zendy

Open Access

Accuracy of the calculated unoccupied states in GaN phases as tested by high-resolution electron energy-loss spectroscopy

Author(s) -

M. Sergio Moreno,

Sorin Lazar,

H.W. Zandbergen,

R.F. Egerton

Publication year - 2006

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.73.073308

Subject(s) - electron energy loss spectroscopy , spectroscopy , materials science , hexagonal crystal system , resolution (logic) , transmission electron microscopy , high resolution , electron , high resolution transmission electron microscopy , atomic physics , x ray photoelectron spectroscopy , energy (signal processing) , electron spectroscopy , high resolution electron energy loss spectroscopy , scattering , physics , optics , nuclear magnetic resonance , crystallography , nanotechnology , chemistry , nuclear physics , computer science , remote sensing , quantum mechanics , artificial intelligence , geology

The electronic structures of cubic and hexagonal phases of GaN have been investigated by high-resolution electron energy-loss spectroscopy in a monochromated transmission electron microscope. Both the Ga-L2,3 and N K-edges were measured. The data are compared to the latest versions of two different calculation schemes: band structure and multiple-scattering calculations. We have found that both methods are capable of giving results that can be compared quantitatively to the experiment. Small discrepancies with experiment could be eliminated by future developments in the implementation of these methods.

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