Open AccessFormation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms
Author(s) -
Naoki Fukata,
S. Fukuda,
Shōichi Satō,
Kunie Ishioka,
Masahiro Kitajima,
Shunichi Hishita,
K. Murakami
Publication year - 2005
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.72.245209
Subject(s) - boron , passivation , silicon , dopant , hydrogen , boro , materials science , raman spectroscopy , isotopes of boron , doping , ion , center (category theory) , crystallography , analytical chemistry (journal) , nanotechnology , chemistry , physics , metallurgy , optoelectronics , organic chemistry , layer (electronics) , chromatography , optics
The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center
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