Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR | Zendy

Norikazu Mizuochi | Zendy; Satoshi Yamasaki | Zendy; H. Takizawa | Zendy; N. Morishita | Zendy; Takeshi Ohshima | Zendy; H. Itoh | Zendy; T. Umeda | Zendy; Junichi Isoya | Zendy

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Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR

Author(s) -

Norikazu Mizuochi,

Satoshi Yamasaki,

H. Takizawa,

N. Morishita,

Takeshi Ohshima,

H. Itoh,

T. Umeda,

Junichi Isoya

Publication year - 2005

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.72.235208

Subject(s) - multiplicity (mathematics) , electron paramagnetic resonance , physics , charge (physics) , silicon , atomic physics , vacancy defect , nuclear magnetic resonance , quantum mechanics , mathematics , mathematical analysis , optoelectronics

In this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucleus double resonance technique. The TV2a center is one of the most commonly observed defects in 4H-SiC, and its origin was identified as one belonging to a class of negatively charged silicon vacancy by means of continuous-wave electron paramagnetic resonance (EPR) and the two-dimensional nutation method of pulsed EPR technique. However, a model with the spin multiplicity of triplet (S=1) and the neutral charge state has recently been suggested. Our result clearly shows that TV2a is a quartet spin (S=3∕2) state and thus should be single-negatively charged (−1)

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