Ab initioinvestigation of the nitrofluoride SiNF
Author(s) -
Emmanuel Betranhandy,
Samir F. Matar
Publication year - 2005
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.72.205108
Subject(s) - xanes , density functional theory , ab initio , stishovite , band gap , materials science , enhanced data rates for gsm evolution , silicon , electronic structure , chemical bond , electronic band structure , spectral line , ab initio quantum chemistry methods , molecular physics , computational chemistry , chemical physics , condensed matter physics , chemistry , molecule , physics , computer science , quantum mechanics , optoelectronics , organic chemistry , telecommunications , quartz , composite material
International audienceA new chemical system SiNF is proposed as a candidate for potential applications based on calculations within the density functional theory in its local density approximation. Different structural setups were built based on a geomimetism principle. All proposed structures were fully geometry optimized using ultrasoft pseudopotentials. From the cohesive energies used as a selection criterion TiOCl-derived and stishovite-based silicon nitrofluoride are evidenced as most stable varieties. The electronic band structure and chemical bonding properties show insulating behavior with a wide band direct gap and stress the different chemical roles played by nitrogen and fluorine. Theoretical K-edge XANES spectra for Si, N, and F are provided as a signature tool of analysis for potential syntheses
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