EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC | Zendy

T. Umeda | Zendy; Yosuke Ishitsuka | Zendy; Junichi Isoya | Zendy; Nguyên Tiên Són | Zendy; Erik Janzén | Zendy; N. Morishita | Zendy; Takeshi Ohshima | Zendy; H. Itoh | Zendy; Ádám Gali | Zendy

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EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC

Author(s) -

T. Umeda,

Yosuke Ishitsuka,

Junichi Isoya,

Nguyên Tiên Són,

Erik Janzén,

N. Morishita,

Takeshi Ohshima,

H. Itoh,

Ádám Gali

Publication year - 2005

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.71.193202

Subject(s) - electron paramagnetic resonance , physics , crystallography , paramagnetism , type (biology) , condensed matter physics , atomic physics , materials science , nuclear magnetic resonance , chemistry , ecology , biology

Carbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p-type or semi-insulating SiC. Here, we present electron-paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR) observations of their negatively charged state (V_C^-) in n-type 4H-SiC. This EPR center (called HEI1) is characterized by an electron spin of 1/2 in a Si-Si antibonding state of VC. First-principles calculations confirm that the HEI1 center arises from V_C^- at hexagonal sites. The HEI1 spectrum shows a transition between C1h and C3v symmetries due to a fast reorientation effect reflected in the nature of this defect. The photo-EPR data suggest that V_C^2- is the dominant form of VC when the Fermi level lies 1.1 eV below the conduction band

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