Compton scattering study of the silicon clathrateBa 8 Si 46 : Experiment and theory
Author(s) -
M. Itou,
Y. Sakurai,
Manabu Usuda,
C. Cros,
Hiroshi Fukuoka,
S. Yamanaka
Publication year - 2005
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.71.125125
Subject(s) - physics , compton scattering , atomic orbital , doping , silicon , clathrate hydrate , scattering , atomic physics , electron , materials science , condensed matter physics , hydrate , chemistry , nuclear physics , optics , optoelectronics , organic chemistry
Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.) ; Critical currents ; Fullerenes and related materials ; X-ray scatteringCompton scattering technique. The Compton profile is sensitive to the change of wave functions, and the good agreement between experiment and theory validates a theoretical prediction. A difference Compton profile between the Ba doped and nondoped clathrates (Si136) has been experimentally obtained and compared with that of a first-principles band structure calculation. The experiment and calculation show excellent agreement with respect to the overall shape in the profile. Analyses of partial density of the states (DOS) predict that, by doping Ba atoms into the Si cages, Ba 6s electrons are transferred into Ba 5d orbitals that are strongly hybridized with Si 3p orbitals. The hybridized states form a sharp peak of the DOS in close vicinity of the Fermi level, which plays an important role for the occurrence of superconductivity in Ba8Si46
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