Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy | Zendy

Yun Ding | Zendy; Kibog Park | Zendy; J. P. Pelz | Zendy; K. C. Palle | Zendy; M. K. Mikhov | Zendy; B. J. Skromme | Zendy; Hira Meidia | Zendy; S. Mahajan | Zendy

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Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy

Author(s) -

Yun Ding,

Kibog Park,

J. P. Pelz,

K. C. Palle,

M. K. Mikhov,

B. J. Skromme,

Hira Meidia,

S. Mahajan

Publication year - 2004

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.69.041305

Subject(s) - materials science , stacking fault , condensed matter physics , conduction band , physics , crystallography , electron , quantum mechanics , chemistry , dislocation

High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.open292

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