Layer intermixing during metal/metal oxide adsorption: Ti/sapphire(0001)
Author(s) -
Claudio Verdozzi,
Peter A. Schultz,
Ruqian Wu,
Arthur H. Edwards,
Nicholas Kioussis
Publication year - 2002
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.66.125408
Subject(s) - materials science , adsorption , oxide , sapphire , metal , atom (system on chip) , layer (electronics) , surface (topology) , crystallography , atomic physics , chemistry , nanotechnology , physics , metallurgy , optics , geometry , laser , mathematics , computer science , embedded system
First principles density functional calculations for adsorption of Ti on ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}(0001)$ indicate that $\mathrm{Ti}:{\mathrm{Al}}_{2}{\mathrm{O}}_{3}(0001)$ interfaces become intermixed. Substitutional Ti replaces a surface Al atom rather than a subsurface Al, and the Al-terminated surface is unstable under Ti adsorption. Adsorbed Ti displaces the surface Al, resulting in a mixed Ti/Al interfacial layer instead of a sharp $\mathrm{Ti}:{\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ interface. Our results provide a coherent picture of the structural and electronic properties of this interface and are consistent with available experimental data.
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