Additive-enhanced coarsening and smoothening of metal films: Complex mass-flow dynamics underlying nanostructure evolution
Author(s) -
A. R. Layson,
J. W. Evans,
P. A. Thiel
Publication year - 2002
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.65.193409
Subject(s) - ostwald ripening , materials science , nanostructure , dissociation (chemistry) , chemical physics , cluster (spacecraft) , metal , nanotechnology , diffusion , oxygen , molecular dynamics , thin film , crystallography , condensed matter physics , chemistry , physics , thermodynamics , computational chemistry , metallurgy , quantum mechanics , computer science , programming language
Many of the phenomena that we see in everyday life,whenever a liquid interacts with a solid, can also occur whena solid interacts with another solid, at least when one of thetwo solids is in the form of a very thin lm. In such a case,the thin lm can wet the other solid or not; the lm canredistribute itself spatially with time—e.g., its droplets ~clus-ters! can merge; and both behaviors can be affected by ‘‘thirdparties,’’ i.e., additives. The effect of additives, particularlyadditives that act as surfactants, has been investigated andexploited extensively in the growth of thin solid lms. How-ever, the effect of additives on mass redistribution and relax-ation after growth has been much less examined for thinsolid lms. Both are important topics, since they relate to theformation and temporal stabilities of solid nanostructures.One example of considerable technological signicance isthe use of surfactants to control the growth mode in semi-conductor heteroepitaxy, e.g., converting Stranski-Krastanovgrowth of Ge on Si~100! to quasi-layer-by-layer growth.
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