Electronic structure and superconducting gap of silicon clathrateBa8Si46studied with ultrahigh-resolution photoemission spectroscopy | Zendy

T. Yokoya | Zendy; Akiko Fukushima | Zendy; T. Kiss | Zendy; Kensuke Kobayashi | Zendy; Shik Shin | Zendy; Koji Moriguchi | Zendy; Akira Shintani | Zendy; Hiroshi Fukuoka | Zendy; S. Yamanaka | Zendy

Open Access

Electronic structure and superconducting gap of silicon clathrateBa8Si46studied with ultrahigh-resolution photoemission spectroscopy

Author(s) -

T. Yokoya,

Akiko Fukushima,

T. Kiss,

Kensuke Kobayashi,

Shik Shin,

Koji Moriguchi,

Akira Shintani,

Hiroshi Fukuoka,

S. Yamanaka

Publication year - 2001

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.64.172504

Subject(s) - superconductivity , physics , clathrate hydrate , condensed matter physics , photoemission spectroscopy , phonon , band gap , coupling (piping) , silicon , spectroscopy , crystallography , materials science , nuclear magnetic resonance , hydrate , x ray photoelectron spectroscopy , chemistry , quantum mechanics , optoelectronics , organic chemistry , metallurgy

We study the electronic structure and superconducting transition of silicon clathrate Ba 8Si46 (Tc58 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width ~;0.3 eV! is substantially smaller than that of band structure calculations ~;1.5 eV!. Ultrahigh-resolution measurements show a superconducting gap at 5.4 K @2D(0)/k BTc53.51#. Fine structures associated with phonons are observed within 70 meV of EF . These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.

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