Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces | Zendy

GilHo Kim | Zendy; M. Y. Simmons | Zendy; ChiTe Liang | Zendy; D. A. Ritchie | Zendy; A. C. Churchill | Zendy; H.-S. Sim | Zendy; K. J. Chang | Zendy; G. Ihm | Zendy; N. Kim | Zendy

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Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

Author(s) -

GilHo Kim,

M. Y. Simmons,

ChiTe Liang,

D. A. Ritchie,

A. C. Churchill,

H.-S. Sim,

K. J. Chang,

G. Ihm,

N. Kim

Publication year - 2001

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.64.165313

Subject(s) - magnetoresistance , condensed matter physics , monolayer , anisotropy , materials science , bar (unit) , quantum well , field (mathematics) , shubnikov–de haas effect , electron , fermi gas , magnetic field , physics , quantum oscillations , optics , nanotechnology , quantum mechanics , laser , mathematics , meteorology , pure mathematics

The authors would like to thank P.H. Beton and P.C. Main for helpful discussions. We wish to thank the Engineering and Physical Sciences Research Council ~UK! for supporting this work. G.H.K. acknowledges financial support from the Korean Ministry of Information and Communication and D.A.R. acknowledges support from Toshiba Research Europe, Ltd. C.T.L. is grateful for support from NSC, Taiwan, and the Research Council, National Taiwan University.

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