Evidence of quantum size effect in nanocrystalline silicon by optical absorption | Zendy

Takahiro Matsumoto | Zendy; Junichi Suzuki | Zendy; Masato Ohnuma | Zendy; Yoshihiko Kanemitsu | Zendy; Yasuaki Masumoto | Zendy

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Evidence of quantum size effect in nanocrystalline silicon by optical absorption

Author(s) -

Takahiro Matsumoto,

Junichi Suzuki,

Masato Ohnuma,

Yoshihiko Kanemitsu,

Yasuaki Masumoto

Publication year - 2001

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.63.195322

Subject(s) - nanocrystalline material , materials science , absorption (acoustics) , nanocrystal , band gap , silicon , scattering , phonon , semiconductor , transmittance , direct and indirect band gaps , nanocrystalline silicon , condensed matter physics , optics , molecular physics , physics , optoelectronics , crystalline silicon , nanotechnology , amorphous silicon , composite material

The optical absorption spectrum in nanocrystalline silicon (n-Si) was determined from both light transmittance and reflectance measurements. We observed that n-Si has a phonon structure in the optical absorption spectrum. This structure originates from momentum-conserving TO phonon absorption and emission, and provides direct evidence that n-Si is an indirect-band-gap semiconductor with quantum size effects. By using small-angle x-ray scattering to measure the nanocrystal size distribution, we found that the band-gap widening varies as (1/L)1.6 with decreasing nanocrystal diameter L

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