Modification of surface-state dispersion upon Xe adsorption: A scanning tunneling microscope study
Author(s) -
Ji Yong Park,
Ungdon Ham,
SeJong Kahng,
Young Kuk,
Koji Miyake,
Kenji Hata,
Hidemi Shigekawa
Publication year - 2000
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.62.r16341
Subject(s) - scanning tunneling microscope , materials science , scanning tunneling spectroscopy , atomic physics , dispersion (optics) , adsorption , scanning electron microscope , electronic structure , quantum tunnelling , electron , fermi level , spin polarized scanning tunneling microscopy , electrochemical scanning tunneling microscope , xenon , analytical chemistry (journal) , molecular physics , condensed matter physics , physics , optics , chemistry , nanotechnology , optoelectronics , quantum mechanics , chromatography , composite material
The modification of the surface electronic structure by an adsorbate is measured quantitatively with scanning tunneling microscopy and spectroscopy for the first time. The standing wave of the Cu surface-state electrons is utilized to probe the subtle change in the electronic structure on the Xe-covered Cu(111). The observed Fermi wavelength on the Xe-covered surface is longer by 15% than on the bare Cu surface. The change upon Xe adsorption is explained with the observed modified dispersion of the Cu surface state; upward shift by (130±20) meV with almost same effective mass
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