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Border states in heterosheets with hexagonal symmetry
Author(s) -
Susumu Okada,
Masatsura Igami,
Kyoko Nakada,
Atsushi Oshiyama
Publication year - 2000
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.62.9896
Subject(s) - hexagonal boron nitride , density of states , condensed matter physics , density functional theory , electronic structure , symmetry (geometry) , materials science , boron nitride , electron , physics , hexagonal crystal system , quantum mechanics , crystallography , nanotechnology , graphene , chemistry , geometry , mathematics
We report first-principles electronic-structure calculations using local density approximation in density functional theory for hexagonally bonded hetero-sheets BNCx consisting of graphite and boron-nitride strips. We find a class of electron states that are localized at borders of the heterosheet. Calculations for other heterosheets and homosheets, C, BN, and BC3, clarify universal features of the border states, edge states, and nearly-free-electron states. Electronic properties related to the border states in planer or tubular BNCx are discussed

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