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Tight-binding study of stacking fault energies and the Rice criterion of ductility in the fcc metals
Author(s) -
Michael J. Mehl,
D. A. Papaconstantopoulos,
Nicholas Kioussis,
M. Herbranson
Publication year - 2000
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.61.4894
Subject(s) - ductility (earth science) , stacking , stacking fault energy , materials science , tight binding , atom (system on chip) , binding energy , stacking fault , transition metal , plane (geometry) , condensed matter physics , thermodynamics , dislocation , electronic structure , atomic physics , physics , metallurgy , chemistry , computer science , geometry , composite material , mathematics , nuclear magnetic resonance , biochemistry , creep , embedded system , catalysis
We have used the Naval Research Laboratory ~NRL! tight-binding ~TB! method to calculate the generalized stacking fault energy and the Rice ductility criterion in the fcc metals Al, Cu, Rh, Pd, Ag, Ir, Pt, Au, and Pb. The method works well for all classes of metals, i.e., simple metals, noble metals, and transition metals. We compared our results with full potential linear-muffin-tin orbital and embedded atom method ~EAM! calcula- tions, as well as experiment, and found good agreement. This is impressive, since the NRL-TB approach only fits to first-principles full-potential linearized augmented plane-wave equations of state and band structures for cubic systems. Comparable accuracy with EAM potentials can be achieved only by fitting to the stacking fault energy.

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