Excitons at a single localized center induced by a natural composition modulation in bulkGa0.5In0.5P | Zendy

Mitsuru Sugisaki | Zendy; Hongwen Ren | Zendy; Kenichi Nishi | Zendy; S. Sugou | Zendy; Yasuaki Masumoto | Zendy

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Excitons at a single localized center induced by a natural composition modulation in bulkGa0.5In0.5P

Author(s) -

Mitsuru Sugisaki,

Hongwen Ren,

Kenichi Nishi,

S. Sugou,

Yasuaki Masumoto

Publication year - 2000

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.61.16040

Subject(s) - photoluminescence , exciton , anisotropy , relaxation (psychology) , physics , spectral line , modulation (music) , energy (signal processing) , molecular beam epitaxy , radiative transfer , atomic physics , materials science , condensed matter physics , analytical chemistry (journal) , optics , epitaxy , nanotechnology , chemistry , quantum mechanics , chromatography , acoustics , psychology , social psychology , layer (electronics)

Optical properties of Ga0.5In0.5P grown by gas-source molecular beam epitaxy are reported. A strong optical anisotropy due to the spontaneous lateral composition modulation of Ga and In was observed in macro- and micro-photoluminescence (PL) spectra. The micro-PL study revealed that the PL band is composed of sharp lines that arise from the radiative decay of excitons trapped at local potential minima caused by the composition modulation. Anisotropy in PL rise and decay times was also observed. The detection energy dependence of the PL decay time is well explained by considering the relaxation process of excitons from shallow traps to deep traps

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