Mn3 d partial density of states inGa 1 − x Mn
Author(s) -
Jun Okabayashi,
A. Kimura,
T. Mizokawa,
A. Fujimori,
T. Hayashi,
M. Tanaka
Publication year - 1999
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.59.r2486
Subject(s) - crystallography , physics , energy (signal processing) , chemistry , quantum mechanics
We have obtained the Mn 3d partial density of states in Ga 12xMnxAs using the resonance photoemission technique as well as by means of the difference between Ga12xMnxAs and GaAs. We have observed a strong satellite structure on the higher binding energy side of the main peak, as in Mn-doped II-VI compounds such as Cd12xMnxTe. Based on analysis using configuration-interaction calculation for a MnAs4 cluster, we could ascribe the spectral features to strong Mn 3 d-As 4p hybridization and Mn 3d-3d Coulomb interaction. @S0163-1829~99!50904-1#
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom