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Electronic and atomic structures of the Si-C-N thin film by x-ray-absorption spectroscopy and theoretical calculations
Author(s) -
Y. K. Chang,
H. H. Hsieh,
W. F. Pong,
M.-H. Tsai,
K. H. Lee,
T.-E. Dann,
F. Z. Chien,
P. K. Tseng,
K. L. Tsang,
W. K. Su,
LiChyong Chen,
ShihChun Wei,
KueiHsien Chen,
D. M. Bhusari,
Y. F. Chen
Publication year - 1998
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.58.9018
Subject(s) - exciton , spectral line , atomic physics , antibonding molecular orbital , materials science , k edge , absorption edge , absorption spectroscopy , absorption (acoustics) , resonance (particle physics) , spectroscopy , crystallography , physics , electron , chemistry , condensed matter physics , optics , band gap , quantum mechanics , composite material , optoelectronics , astronomy , atomic orbital

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