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Nitrogen doping in purelysp2bonded forms of carbon
Author(s) -
G. Jungnickel,
Peter Sitch,
Thomas Frauenheim,
B. R. Eggen,
M. I. Heggie,
C. D. Latham,
C S G Cousins
Publication year - 1998
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.57.r661
Subject(s) - diamond , doping , materials science , fullerene , nitrogen , dopant , boron , planar , physics , computer science , optoelectronics , nuclear physics , quantum mechanics , computer graphics (images) , composite material
We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for $n$-type doping by nitrogen. The presence of localized $\ensuremath{\pi}$ bonds makes them as stable as fullerene ${\mathrm{C}}_{60}$ and causes large band gaps of $\ensuremath{\approx}3$ eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

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