Luminescence properties of transition-metal-doped GaSb | Zendy

P. Hidalgo | Zendy; Bianchi Méndez | Zendy; P.S. Dutta | Zendy; J. Piqueras | Zendy; E. Diéguez | Zendy

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Luminescence properties of transition-metal-doped GaSb

Author(s) -

P. Hidalgo,

Bianchi Méndez,

P.S. Dutta,

J. Piqueras,

E. Diéguez

Publication year - 1998

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.57.6479

Subject(s) - cathodoluminescence , luminescence , materials science , doping , impurity , microanalysis , scanning electron microscope , dopant , transition metal , analytical chemistry (journal) , acceptor , electron , condensed matter physics , optoelectronics , chemistry , physics , biochemistry , organic chemistry , chromatography , composite material , catalysis , quantum mechanics

The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties

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