Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy | Zendy

Y. Dou | Zendy; T P Fishlock | Zendy; R.G. Egdell | Zendy; D. Law | Zendy; G. Beamson | Zendy

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Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy

Author(s) -

Y. Dou,

T P Fishlock,

R.G. Egdell,

D. Law,

G. Beamson

Publication year - 1997

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.55.r13381

Subject(s) - doping , materials science , photoemission spectroscopy , band gap , angle resolved photoemission spectroscopy , inverse photoemission spectroscopy , semiconductor , ultraviolet , spectroscopy , conduction band , direct and indirect band gaps , shrinkage , ultraviolet photoelectron spectroscopy , condensed matter physics , x ray photoelectron spectroscopy , electronic structure , optoelectronics , nuclear magnetic resonance , physics , quantum mechanics , composite material , electron

The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.

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