Open AccessRoom-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy
Author(s) -
J. van Wingerden,
Annemieke van Dam,
M. J. Haye,
P. M. L. O. Scholte,
F. Tuinstra
Publication year - 1997
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.55.4723
Subject(s) - nucleation , scanning tunneling microscope , silicon , epitaxy , materials science , dimer , atom (system on chip) , kinetic energy , line (geometry) , crystallography , chemical physics , molecular physics , nanotechnology , chemistry , optoelectronics , physics , nuclear magnetic resonance , thermodynamics , geometry , mathematics , layer (electronics) , quantum mechanics , computer science , embedded system
Room-temperature deposited submonolayers of silicon on Si~001! are investigated using STM. The observed structures and the mechanisms leading to their formation are discussed. Isolated ad-dimers in different geometries are described and a kinetic model for their formation is deduced. It is shown how further growth occurs via the formation of 3-atom clusters, which act as nucleation centers for the formation of two types of linear structures. One of the line types is formed in the @110# direction, and has been observed before. The other is in the @310# direction. At a coverage of nearly 0.2 ML a kind of random network consisting of segments of the two types of atomic lines is formed. Above 0.2 ML coverage these lines are converted into epitaxial dimer rows. A pathway for this conversion is proposed on the basis of experimental observations. @S0163-1829~97!11107-9#
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