In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes | Zendy

Jan Genoe | Zendy; Kristel Fobelets | Zendy; Chris Van Hoof | Zendy; G. Borghs | Zendy

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In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes

Author(s) -

Jan Genoe,

Kristel Fobelets,

Chris Van Hoof,

G. Borghs

Publication year - 1995

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.52.14025

Subject(s) - quantum tunnelling , condensed matter physics , hamiltonian (control theory) , diode , physics , dispersion relation , formalism (music) , boundary value problem , materials science , quantum mechanics , mathematical optimization , mathematics , art , musical , visual arts

We report on a flexible eight-band model, derived from a modified Kane base, generating a transfer-matrix formalism to calculate the transmission probability of carriers through, and the in-plane dispersion relations of, stratified media. We apply this model to study InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes. We show that the boundary-condition sets deduced from current continuity and the boundary-condition sets deduced from a Hermitian Hamiltonian defined across the interface are equal. A simplified triple-band model is found to be a good approximation to calculate the deep light-hole energy levels in a resonant interband tunneling diode. However, these simplified triple-band approximations are no longer valid when the carriers have an in-plane momentum.status: publishe

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